High-Throughput Exploration of NV-like Color Centers Across Host Materials

Point defects in semiconductors offer a promising platform for advancing quantum technologies due to their localized energy states and controllable spin properties. Prior research has focused on a limited set of defects within materials such as diamond, silicon carbide, and hexagonal boron nitride. We present a high-throughput study to systematically identify and evaluate point defects across a diverse range of host materials, aiming to uncover previously unexplored defects in novel host materials suitable for use in quantum applications. A range of host materials are selected for their desirable properties, such as appropriate bandgaps, crystal structure, and absence of d- or f-electrons. The Automatic Defect Analysis and Qualification (ADAQ) software framework is used to generate vacancies, substitutions with s- and p-elements, and interstitials in these materials and use density functional theory to calculate key properties such as Zero-Phonon Lines (ZPLs), ionic displacements, Transition Dipole Moments (TDMs), and formation energies. Special attention is given to charge correction methods for materials with dielectric anisotropy. We uncover new defect-host combinations with advantageous properties for quantum applications: 28 defects across 11 isotropic and 2 anisotropic host materials show properties similar to the nitrogen-vacancy (NV) center in diamond. Beryllium (Be) substitutional defects in SrS, MgS, and SrO emerge as particularly promising. These findings contribute to diversifying and enhancing the materials available for quantum technologies.