Highly coherent grain boundaries induced by local pseudo-mirror symmetry in $β$-Ga2O3

Grain boundaries have extensive influence on the performance of crystal materials. However, the atomic-scale structure and its relation with local and crystallographic symmetries remain elusive in low-symmetry crystals. Herein, we find that the local pseudo-mirror-symmetric atomic layer is the common physical origin of a series of highly coherent grain boundaries in the low-symmetry $β$-Ga2O3 crystal. These include the (100) twin boundary and an emerging series of $(h-1'0'2)/(h+1'0'\bar{2})$ coherent asymmetric grain boundaries (CAGBs). Owing to the local pseudo-mirror symmetry and the special geometric relation of the $β$-Ga2O3 conventional cell, these CAGBs place 80% of the boundary atoms in pseudo-coincident sites, exhibiting high coherence under the coincident-site lattice model. With a combination of density functional theory calculations, Czochralski growth experiment, and atomic-scale characterizations, the structure and stability of the $(002)/(20\bar{2})$-A CAGB are confirmed, with a boundary energy density as low as 0.36 J/m2. This CAGB is responsible for the spontaneous formation of a twinned defect facet at the surface steps during the epitaxy growth of $β$-Ga2O3, warranting a substrate orientation selection rule for $β$-Ga2O3. Through this study, we provide insights into the grain boundary physics in the low-symmetry $β$-Ga2O3 crystal while emphasizing the importance of the local pseudo-symmetries in the low-symmetry crystals.