Emergence of a Helical Metal in Rippled Ultrathin Topological Insulator Sb\textsubscript{2}Te\textsubscript{3} on Graphene

The integration of topological insulators (TIs) with graphene offers a pathway to engineer hybrid quantum states, yet the impact of strain at the 2D limit remains a critical open question. Here, we investigate the structural properties of ultrathin (1 quintuple layer) Sb$_2$Te$_3$ grown on single-layer graphene and, motivated by the structural modulations observed at the TI surface, explore theoretically how such nanoscale corrugations may influence the electronic behavior of the system. Using low-temperature scanning tunneling microscopy (LT-STM), we observe a periodic rippling of the heterostructure with a wavelength of ~$\sim8.7$ nm. Energetic analysis reveals that these ripples are not intrinsic but are driven by strain from the substrate during cooling. Density functional theory (DFT) calculations show that while the ideal flat heterostructure exhibits a hybridization gap of $\sim40$ meV, the ripple-induced structural modulation closes this gap, restoring a metallic state. This gapless phase is not a trivial metal. By combining an effective moiré ladder model with spin-resolved DFT, we find that the proximity-induced spin-orbit coupling is redistributed across a dense manifold of minibands. The resulting ``Helical Metal'' has a complex spin-texture beyond a simple Rashba splitting. Remarkably, while the flat system is effectively spinless in this ultrathin limit due to hybridization, the ripples actively restore the spin polarization. Our findings suggest that rippled TI/graphene heterostructures provide an interesting platform to develop spintronics, where geometric modulation unlocks dense helical states that are inaccessible in the pristine flat limit.