Swift heavy ion track formation in SiC films under high-temperature irradiation

The resistance of bulk silicon carbide (SiC) to impacts of swift heavy ions (SHI) decelerating at room temperature in the electronic stopping regime is well known. However, the effect of the SiC film thickness on the formation and structure of SHI tracks over a wide range of irradiation temperatures remains unexplored. To address this disadvantage, we utilize a model sensitive to irradiation temperature that describes all stages of ion track formation: from material excitation, considering the emission of excited electrons from the film surface (MC code TREKIS-3), to the reaction of the material's atomic system to the excitation (classical molecular dynamics). We observed the formation of two different types of nanostructures on the surface of SiC films with thicknesses ranging from 10 nm to 100 nm when irradiated with 710 MeV Bi ions: craters and hills. The type of nanostructure formed depended on the irradiation temperature. The transition irradiation temperature ($T_{tr}$) from hills to craters grows with the film thickness and follows an empirical relation $T_{tr}=T_{tr}^{cr} \left(1-\left(1+\left(L/L_{cr} \right)^2 \right)^{-\frac{1}{2}} \right)$ with $T_{tr}^{cr}=1534$ K and $L_{cr}=2.8$ nm. That means such a transition should occur in bulk SiC at the irradiation temperature of $\approx 1534$ K.